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UPA651TT-E1-A

MOSFET P-CH 20V 6-WSOF

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SeekIC No. : 003432790 Detail

UPA651TT-E1-A: MOSFET P-CH 20V 6-WSOF

UPA651TT-E1-A Data Sheet

floor Price/Ceiling Price

US $ .12~.12 / Piece | Get Latest Price
Part Number:
UPA651TT-E1-A
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.12
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2026/10/9

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 5A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 69 mOhm @ 2.5A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) @ Vgs: 5.5nC @ 4V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Power - Max: 200mW Mounting Type: Surface Mount
Package / Case: 6-WSOF Supplier Device Package: 6-WSOF    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 200mW
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 5A
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Manufacturer: Renesas Electronics America
Gate Charge (Qg) @ Vgs: 5.5nC @ 4V
Input Capacitance (Ciss) @ Vds: 600pF @ 10V
Package / Case: 6-WSOF
Supplier Device Package: 6-WSOF
Rds On (Max) @ Id, Vgs: 69 mOhm @ 2.5A, 4.5V


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