Features: • Low noiseQ1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP.@f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e|2 = 9.0 dB TYP.@f = 1 GHz, VCE = 3 V, IC = 7 mA• 6-pin thin-type small mini mold package• 2 different transistors on-chip (2SC...
UPA834TF: Features: • Low noiseQ1 : NF = 1.4 dB TYP., Q2 : NF = 1.2 dB TYP.@f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 12.0 dB TYP. Q2 : |S21e|2 = 9.0 dB TYP.@f = 1 GHz, VCE = 3 V, ...
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|
PARAMETERS |
SYMBOLS |
RATING |
UNIT | |
| Q1 | Q2 | |||
|
Collector to Base Voltage |
VCBO |
20 |
20 |
V |
|
Collector to Emitter Voltage |
VCEO |
10 |
12 |
V |
|
Emitter to Base Voltage |
VEBO |
1.5 |
3 |
V |
|
Collector Current |
IC |
65 |
100 |
mA |
|
Total Power Dissipation |
PT | 150 in 1element | 150 in 1element | mW |
|
200 in 2 elementsNote | ||||
| Junction Temperature | TJ | 150 | 150 | |
| Storage Temperature | TSTG | -65 to +150 | ||
Note 110 mW must not be exceeded for 1 element.