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Part Number: UPC8211TK
Description: NEC's UPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise ampl...
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UPC8211TK
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DataSheet
General Description
UPC8211TK General Description
NEC's UPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifi er for GPS and as a general low nois amplifi er for mobile communications.
The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm) suitable for surface mount and optimized for very densely populated compact designs.
This IC is manufactured using NEC's 60 GHz fTUHS2 (Ultra High Speed Pro cess) silicon bipolar process. This process can realize excellent low noise peformance and low power consumption simultaneously. NEC's stringent quality assurance and test procedures en sure the highest reliability and per for mance.
UPC8211TK Maximum Ratings
| SYMBOLS | PARAMETERS | UNITS | RATINGS |
| VCC | Supply Voltage | V | 4.0 |
| PD | Power Dissipation | mW | 232 |
| TA | Operating Ambient Temperature |
°C | -40 to +85 |
| TSTG | Storage Temperature | °C | -55 to +150 |
| PIN | Input Power | dBm | +10 |
1. Mounted on a double-sided copper-clad 50 x 50 x 1.6 mm epoxy glass PWB
UPC8211TK Features
• LOW NOISE: NF = 1.3 dB TYP.
• HIGH GAIN: GP = 18.5 dB TYP.
• LOW CURRENT CONSUMPTION: ICC = 3.5 mA TYP. at VCC = 3.0 V
• BUILT-IN POWER SAVE FUNCTION:
• HIGH-DENSITY SURFACE MOUNTING: 6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)
• HIGH GAIN: GP = 18.5 dB TYP.
• LOW CURRENT CONSUMPTION: ICC = 3.5 mA TYP. at VCC = 3.0 V
• BUILT-IN POWER SAVE FUNCTION:
• HIGH-DENSITY SURFACE MOUNTING: 6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)
UPC8211TK Typical Application
• Low Noise amplifi er for GPS and mobile communications
• General purpose low noise amplifi er
• General purpose low noise amplifi er
UPC8211TK Connection Diagram
UPC1028H
PDF/DataSheet Download
- Datasheet: UPC1028H
- File Size: 576711 KB
- Manufacturer: nec
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