UPD16335

Features: • Selectable by IBS pin; three 32-bit bi-directional shift register circuits configuration or six 16-bit bi-directional shiftregister circuits configuration• Data control with transfer clock (external) and latch• High-speed data transfer (fmax. = 25 MHz min. at data fet...

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UPD16335 Picture
SeekIC No. : 004538061 Detail

UPD16335: Features: • Selectable by IBS pin; three 32-bit bi-directional shift register circuits configuration or six 16-bit bi-directional shiftregister circuits configuration• Data control with ...

floor Price/Ceiling Price

Part Number:
UPD16335
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Selectable by IBS pin; three 32-bit bi-directional shift register circuits configuration or six 16-bit bi-directional shift
register circuits configuration
• Data control with transfer clock (external) and latch
• High-speed data transfer (fmax. = 25 MHz min. at data fetch)
                                           (fmax. = 16 MHz min. at cascade connection)
• High withstand output voltage (80 V, +50/75 mAMAX.)
• 5 V CMOS input interface
• High withstand voltage CMOS structure
• Capable of reversing all driver outputs by PC pin




Specifications

Parameter
Symbol
Rating
Unit
Logic Block Supply Voltage
VDD1
0.5 to +7.0
V
Driver Block Supply Voltage
VDD2
0.5 to +80
V
Logic Block Input Voltage
VI
0.5 to VDD1 +0.5
V
Driver Block Output Current
IO2

+50/75

mA
Junction Temperature
TJ
±125
°C
Storage Temperature
Tstg
-65 to +150
°C



Description

The PD16335 is a high-voltage CMOS driver designed for flat display panels such as PDPs, VFDs and ELs. It consists of a 96-bit bi-directional shift register, 96-bit latch and high-voltage CMOS driver. The logic block is designed to operate using a 5-V power supply enabling direct connection to a gate array or a microcontroller. In addition, the PD16335 achieves low power dissipation by employing CMOS structure while having a high withstand voltage output
(80 V, +50/75 mA).




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