RF Amplifier RO 551-UPD5702TU-A
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| Mounting Style : | SMD/SMT | Package / Case : | TU-8 |
| SYMBOLS | PARAMETERS | UNITS | RATINGS |
| VDS | Supply Voltage 1 | V | 6.0 |
| VGS | Supply Voltage 2 | V | 6.0 |
| PD | Power Dissipation2 | W | 0.866 |
| TA | Operating Ambient Temp. | -40 to +85 | |
| TSTG | Storage Temp. Range | -65 to +150 | |
| PIN(MAX) | Maximum Input Level | dBm | +10 |
| Tj | Junction Temperature | +150 |
NEC's UPD5702TU is a silicon LD MOS IC designed for use asa power amplifier up to 2.4 GHz application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.