MOSFET 2N-CH 30V 1.5A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V |
Gate-Source Breakdown Voltage : | 12 V | Continuous Drain Current : | 1.5 A |
Resistance Drain-Source RDS (on) : | 0.24 Ohms | Configuration : | Dual |
Mounting Style : | SMD/SMT | Package / Case : | TUMT-6 |
Packaging : | Reel |
Technical/Catalog Information | US6K1TR |
Vendor | Rohm Semiconductor(VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25° C | 1.5A |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.5A, 4.5V |
Input Capacitance (Ciss) @ Vds | 80pF @ 10V |
Power - Max | 1W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 2.2nC @ 4.5V |
Package / Case | TUMT6 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | US6K1TR US6K1TR US6K1CT ND US6K1CTND US6K1CT |