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US6K4TR

MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 1.5A

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SeekIC No. : 00151268 Detail

US6K4TR: MOSFET Med Pwr, Sw MOSFET N Chan, 20V, 1.5A

US6K4TR Data Sheet

floor Price/Ceiling Price

US $ .18~.4 / Piece | Get Latest Price
Part Number:
US6K4TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.4
  • $.31
  • $.24
  • $.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 10 V Continuous Drain Current : 1.5 A
Resistance Drain-Source RDS (on) : 130 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TUMT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Continuous Drain Current : 1.5 A
Gate-Source Breakdown Voltage : 10 V
Resistance Drain-Source RDS (on) : 130 mOhms
Package / Case : TUMT-6


Parameters:

Technical/Catalog InformationUS6K4TR
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.5A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 110pF @ 10V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.5nC @ 4.5V
Package / CaseTUMT6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names US6K4TR
US6K4TR
US6K4DKR ND
US6K4DKRND
US6K4DKR



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