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US6M1TR

MOSFET N+P 30 20V 1A

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SeekIC No. : 00158234 Detail

US6M1TR: MOSFET N+P 30 20V 1A

US6M1TR Data Sheet

floor Price/Ceiling Price

US $ .11~.13 / Piece | Get Latest Price
Part Number:
US6M1TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • 3000~6000
  • 6000~12000
  • Unit Price
  • $.13
  • $.12
  • $.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : + 30 V, - 20 V
Gate-Source Breakdown Voltage : + 20 V, - 12 V Continuous Drain Current : +/- 1.4 A, +/- 1 A
Resistance Drain-Source RDS (on) : 170 mOhms at 10 V, 280 mOhms at - 4.5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TUMT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Drain-Source Breakdown Voltage : + 30 V, - 20 V
Package / Case : TUMT-6
Gate-Source Breakdown Voltage : + 20 V, - 12 V
Continuous Drain Current : +/- 1.4 A, +/- 1 A
Resistance Drain-Source RDS (on) : 170 mOhms at 10 V, 280 mOhms at - 4.5 V


Parameters:

Technical/Catalog InformationUS6M1TR
VendorRohm Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25° C1.4A, 1A
Rds On (Max) @ Id, Vgs240 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds 70pF @ 10V
Power - Max1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs2nC @ 5V
Package / CaseTUMT6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names US6M1TR
US6M1TR



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