US6M2TR

MOSFET N+P 20V 1.5A/1A

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SeekIC No. : 00150974 Detail

US6M2TR: MOSFET N+P 20V 1.5A/1A

floor Price/Ceiling Price

US $ .16~.42 / Piece | Get Latest Price
Part Number:
US6M2TR
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.42
  • $.34
  • $.25
  • $.16
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : + 30 V, - 20 V
Gate-Source Breakdown Voltage : 12 V Continuous Drain Current : +/- 1.5 A, +/- 1 A
Resistance Drain-Source RDS (on) : 0.24 Ohms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TUMT-6 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Resistance Drain-Source RDS (on) : 0.24 Ohms
Drain-Source Breakdown Voltage : + 30 V, - 20 V
Continuous Drain Current : +/- 1.5 A, +/- 1 A
Package / Case : TUMT-6


Parameters:

Technical/Catalog InformationUS6M2TR
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN and P-Channel
Drain to Source Voltage (Vdss)30V, 20V
Current - Continuous Drain (Id) @ 25° C1.5A, 1A
Rds On (Max) @ Id, Vgs240 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 80pF @ 10V
Power - Max1W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs2.2nC @ 4.5V
Package / CaseTUMT6
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names US6M2TR
US6M2TR
US6M2DKR ND
US6M2DKRND
US6M2DKR



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