USI-6000

The USI-6000 array series consists of 6 different family member (USI- 6001 through USI-6006).Architecturally, each member can be broken into a mixture of two distinct area types:A predominantly digital area characterized by MOS transistors with 4 micron and 6 micron channel lengths.A predominantly analog area characterized 12 micron and 24 micron channel length MOS transistors and passive elements such as resistors and capacitors.A new family of advanced oxide isolated silicon-gate CMOS arrays, the USI-6000 series offered by Universal Semiconductor, Ina San Jose, California, was designed to overcome the performance limitations of the first generation arrays. The basic philosophy was to provide the fullest possible spectrum of available uncommitted components tailored to optimize both analog and digital circuit performance.

In order to provide the greatest expecxation of first time working silicon, Universal Semiconductor, Inc. has a  library of proven analog/digital circuits that function as off the shelf solutions to the application. After a paper design has been completed, and critical areas have been simulated, the circuit may be breadboarded with these kit parts. Since these kits are metal mask circuits on theUSI-b001, USI-6005 and USI-6006, they will function closely to the final chip. Performance is generally superior on the final chip because of the elimination of all wiring between kits and kit output buffers.Noise performance of operational amplifiers configured on the USI-6000 family is an order of magnitudethan anything achievable on the older metal-gate arrays. This improvement is due to both processimprovements and optimization of the basic uncommitted transistors for analog performance.

Another major advantage of the silicon-gate process over the metal With applied voltages, metal-gate transistor thresholds gate process concerns threshold drift.periods of time. For analog differential comparator are observed to change many millivolts over extended different voltage levels and thus the drift problem does not occur in the applications, the input stage transistors usually sit at comparator's trip point will change somewhat over time. This potential USI-6000 silicon-gate process.