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V12P10

Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 • Compon...

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SeekIC No. : 004539518 Detail

V12P10: Features: • Very low profile - typical height of 1.1 mm• Ideal for automated placement• Trench MOS Schottky technology• Low forward voltage drop, low power losses• High...

V12P10 Data Sheet

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Part Number:
V12P10
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Halogen-free




Specifications

PARAMETER
SYMBOL
V12P10
UNIT
Device marking code
V1210
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
12
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Non-repetitive avalanche energy
at IAS = 2.0 A, TJ = 25
EAS
100
mJ
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150





Description

V12P10


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