V29C51400T Selling Leads, Price trend, V29C51400T DataSheet download, circuit diagram from SeekIC.com

Features: 256K x 16-bit or 512K x 8-bit OrganizationAddress Access Time: 70, 90, 120 nsSingle 5V± 10% Power SupplySector Erase Mode Operation16KB Boot Block (lockable)1K bytes per Sector, 512 Sectors Sector-Erase Cycle Time: 10ms (Max) Byte-Write Cycle Time: 20s (Max)Minimum 10,000 Erase-Program...

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SeekIC No. : 004539719 Detail

V29C51400T: Features: 256K x 16-bit or 512K x 8-bit OrganizationAddress Access Time: 70, 90, 120 nsSingle 5V± 10% Power SupplySector Erase Mode Operation16KB Boot Block (lockable)1K bytes per Sector, 512 Sector...

V29C51400T Data Sheet

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Part Number:: V29C51400T
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Product Details

Description

Features:

256K x 16-bit or 512K x 8-bit Organization
Address Access Time: 70, 90, 120 ns
Single 5V± 10% Power Supply
Sector Erase Mode Operation
16KB Boot Block (lockable)
1K bytes per Sector, 512 Sectors
   Sector-Erase Cycle Time: 10ms (Max)
   Byte-Write Cycle Time: 20s (Max)
Minimum 10,000 Erase-Program Cycles
Low power dissipation
   Active Read Current: 19mA (Typ)
   Active Program Current: 30mA (Typ)
   Standby Current: 100A (Max)
Hardware Data Protection
Low V_CC Program Inhibit Below 3.5V
Self-timed write/erase operations with end-ofcycledetection
   DATA Polling
   Toggle Bit
CMOS and TTL Interface
Available in two versions
   V29C51400T (Top Boot Block)
   V29C51400B (Bottom Boot Block)
Packages:
   48-pin TSOP

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Commercial	Unit
V_IN	Input Voltage (input or I/O pins)	-2 to +7	V
V_IN	Input Voltage (A₉ pin, OE)	-2 to +13	V
V_CC	Power Supply Voltage	-0.5 to +5.5	V
T_STG	Storage Temerpature (Plastic)	-65 to +125	°C
T_OPR	Operating Temperature	0 to +70	°C
I_OUT	Short Circuit Current⁽²⁾	200 (Max.)	mA

Description

The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

The V29C51400T/V29C51400B offers a combination of: Boot Block with Sector Erase/Write Mode. The end of write/erase cycle is detected by DATA Polling of I/O₇ or by the Toggle Bit I/O⁶.

The V29C51400T/V29C51400B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase.

Boot block architecture enables the device to boot from a protected sector located either at the top (V29C51400T) or the bottom (V29C51400B). All inputs and outputs are CMOS and TTL compatible.

The V29C51400T/V29C51400B is ideal for applications that require updatable code and data storage.

V29C51400T

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