PinoutDescriptionThe V53C104AK-80 belongs to the V53C104A series.V53C104AK-80 is a high speed 262,144*4 bit CMOS dynamic radom access memory. Its all inputs and outputs are TTL compatible. It is available in 20 lead plastic DIP package. There are some features of V53C104AK-80 as follows. (1) low ...
V53C104AK-80: PinoutDescriptionThe V53C104AK-80 belongs to the V53C104A series.V53C104AK-80 is a high speed 262,144*4 bit CMOS dynamic radom access memory. Its all inputs and outputs are TTL compatible. It is ava...
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DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C104AK-80 belongs to the V53C104A series. V53C104AK-80 is a high speed 262,144*4 bit CMOS dynamic radom access memory. Its all inputs and outputs are TTL compatible. It is available in 20 lead plastic DIP package.
There are some features of V53C104AK-80 as follows. (1) low power dissipation; (2) low CMOS standby current; (3) common I/O capability; (4) 512 refresh cycles/8 ms; (5) fast page mode for a sustainable data rate greater than 22 Hz; (6) on-chip substrate bias generator.
The absolute maximum ratings of V53C104AK-80 can be summorized as follows: (1): ambient temperature under bias is from -10 to 80 ; (2): storage temperature is from -55 to 125 ; (3): voltage relative to VSS and voltage on VDD relative to VSS are both from -1.0 V to 7.0 V; (4): data output current is 50 mA; (5): power dissipation is 1.0 W. Then is about its DC characteristics at TA is from 0 to 70 and VDD is 5 V±10 %. (1): input leakage current is from -10 A to 10 A; (2): the maximum VDD supply current is 85 mA at access time is 70 ns and is 75 mA at access time is 80 ns; (3): input low voltage is from -1 V to 0.8 V; (4): the maximum output low voltage is 0.4 V at IOL is 4.2 mA; (5): the minimum output high voltage is 2.4 V at IOH is -5 mA.