V53C104F

The V53C104F is a high speed 262,144*4 bit CMOS dynamic radom access memory. V53C104F's all inputs and outputs are TTL compatible. It is available in 20 lead plastic DIP package. It has some features as follows. (1) low power dissipation; (2) low CMOS standby current; (3) common I/O capability; (4) refresh interval; (5) fast page mode for a sustainable data rate greater than 25 Hz.

The absolute maximum ratings of V53C104F can be summorized as follows: (1): ambient temperature under bias is from -10 to 80 ; (2): storage temperature is from -55 to 125 ; (3): voltage relative to VSS and voltage on VDD relative to VSS are both from -1.0 V to 7.0 V; (4): data output current is 50 mA; (5): power dissipation is 1.0 W. Then is about its DC characteristics at TA is from 0 to 70 and VDD is 5 V±10 %. (1): input leakage current is from -10 A to 10 A; (2): the maximum VDD supply current is 90 mA at access time is 60 ns and is 80 mA at access time is 70 ns; (3): input low voltage is from -1 V to 0.8 V; (4): the maximum output low voltage is 0.4 V at IOL is 4.2 mA; (5): the minimum output high voltage is 2.4 V at IOH is -5 mA.