DescriptionThe V53C16256HK50 is designed as one kind of 262,144 x 16 bit highperformance CMOS dynamic random access memory device that is best suited for graphics, and DSP applications. Also this device has symmetric address and accepts 512 cycle 8ms interval. Features of the V53C16256HK50 are:(1...
V53C16256HK50: DescriptionThe V53C16256HK50 is designed as one kind of 262,144 x 16 bit highperformance CMOS dynamic random access memory device that is best suited for graphics, and DSP applications. Also this de...
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DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C16256HK50 is designed as one kind of 262,144 x 16 bit highperformance CMOS dynamic random access memory device that is best suited for graphics, and DSP applications. Also this device has symmetric address and accepts 512 cycle 8ms interval.
Features of the V53C16256HK50 are:(1)256K x 16-bit organization; (2)Fast Page Mode for a sustained data rate of 53 MHz; (3)RAS access time: 30, 35, 40, 45, 50, 60 ns; (4)Dual CAS Inputs; (5)Low power dissipation; (6)Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh; (7)Refresh Interval: 512 cycles/8 ms; (8)Available in 40-pin 400 mil SOJ and 40/44L-pin 400 mil TSOP-II packages; (9)Single +5V ±10% Power Supply; (10)TTL Interface.
The absolute maximum ratings of the V53C16256HK50 can be summarized as:(1)Ambient Temperature Under Bias: -10 °C to +80 °C;(2)Storage Temperature (plastic): -55 °C to +125 °C;(3)Voltage Relative to VSS: -1.0 V to +7.0V;(4)Data Output Current: 50 mA;(5)Power Dissipation: 1.0 W. If you want to know more information such as the electrical characteristics about the V53C16256HK50, please download the datasheet in www.seekic.com or www.chinaicmart.com.