Features: 256K x 16-bit organizationEDO Page Mode for a sustained data rate of 100 MHzRAS access time: 25, 30, 35, 40, 45, 50 nsDual CAS InputsLow power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RAS RefreshOptional Self Refresh (V53C16258SH)Refresh Interval: 512 cycles/8 msAvailabl...
V53C16258H: Features: 256K x 16-bit organizationEDO Page Mode for a sustained data rate of 100 MHzRAS access time: 25, 30, 35, 40, 45, 50 nsDual CAS InputsLow power dissipationRead-Modify-Write, RAS-Only Refres...
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PinoutDescriptionThe V53C104AK-80 belongs to the V53C104A series.V53C104AK-80 is a high speed 262,...
DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C16258H is a high speed 262,144 x 16 bit high performance CMOS dynamic random access memory. The V53C16258H offers a combination of unique features including: EDO Page Mode operation for higher sustained bandwidth with Page Mode cycle times as short as 10ns. All inputs are TTL compatible. Input and output capicatance is significantly lowered to increase performance and minimize loading. These features make the V53C16258H ideally suited for a wide variety of high performance computer systems and peripheral applications.