V53C16258SHT40

The V53C16258SHT40 is a high speed 262,144*16 bit high performance CMOS dynamic random access memory.The V53C16258SHT40 offers a combination of unique features including:EDO page mode operation for higher sustained band width with page mode cycle times as short as 10ns.All inputs are TTL compatible.Input and output capicatance is significantly lowered to increase performance and minimize loading. Features of the V53C16258SHT40 are:(1)256K*16-bit organization; (2)EDO page mode for a sustained data rate of 100MHz; (3)RAS accesstime:25,30,35,40,45,50ns; (4)low power dissipation; (5)read-modify-write,RAS-Only refresh,CAS-before-RAS refresh capability; (6)optional self refresh; (7)refresh interval:512 cycles/8ms; (8)available in 40-pin 400 mil SOJ and 40/44L-pin 400mil TSOP-|| packages; (9)single +5V±10% power supply ; (10)TTL interface.

The absolute maximum ratings of the V53C16258SHT40 can be summarized as:(1)ambient temperature under bias:-10~80; (2)storage temperature (plastic):-55~125; (3)voltage relative to Vss:-1.0~7.0V; (4)data output current:50mA; (5)power dissipation:1.0W.

The electrical characteristics(Ta=25) of the V53C16258SHT40 can be summarized as:(1)input leakage current(any input pin):-10~10A; (2)output leakage current(for high-z stage):-10~10A; (3)Vcc supply current operating:260mA; (4)Vcc supply current,TTL standvy:200mA.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .