V53C806HK45

The V53C806HK45  is one of the V53C806H series.The V53C806HK45 is a is a ultra high speed 1,048,576 x8 bit CMOS dynamic random access memory. The V53C806H offers a combination of features: Fast Page Mode for high data bandwidth, and Low CMOS standby current. Features of the V53C806HK45 are:(1)1M x 8-bit organization; (2)Fast Page Mode for a sustained data rate of 43 MHz; (3)RAS access time: 40, 45, 50, 60 ns; (4)Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability; (5)Refresh Interval: 1024 cycle/16 ms; (6)Available in 28-pin 400 mil SOJ package; (7)Single +5V ±10% Power Supply; (8)TTL Interface.

The absolute maximum ratings of the V53C806HK45 can be summarized as:(1)Ambient Temperature Under Bias:10°C to +80°C; (2)Storage Temperature (plastic):55°C to +125°C; (3)Voltage Relative to VSS :1.0 V to +7.0 V; (4)Data Output Current :50 mA; (5)Power Dissipation:1.4 W.

The electrical characteristics(Ta=25) of the V53C806HK45 can be summarized as:(1)Supply Voltage :4.5~5.5V,5.0 typ.; (2)Input Low Voltage :-1V min. 0.8V max.; (3)Input High Voltage :2.4Vmin.,Vcc+1Vmax.; (4)Output Low Voltage :0.4V max.; (5)Output High Voltage :2.4V min.If you want to know more information such as the electrical characteristics  of the V53C806HK45, please download the datasheet in www.seekdatasheet.com .