V53C808H35

The V53C808H35 is one of the V53C808H series. The V53C808H35 is a ultra high speed 1,048,576*8 bit CMOS dynamic random access memory.The V53C808H35 offers a combination of features:Page mode with extended data ouptut for high data bandwidthm,and low CMOS standby current. Features of the V53C808H35 are:(1)1M*8-bit organization; (2)EDO page mode for a sustained data rate of 72MHz; (3)RAS accesstime:35,40,45,50ns; (4)low power dissipation; (5)read-modify-write,RAS-Only refresh,CAS-before-RAS refresh capability; (6)optional self refresh; (7)refresh interval:1024 cycles/16ms; (8)available in 28-pin 400 mil SOJ package; (9)single +5V±10% power supply ; (10)TTL interface.

The absolute maximum ratings of the V53C808H35 can be summarized as:(1)ambient temperature under bias:-10~80; (2)storage temperature (plastic):-55~125; (3)voltage relative to Vss:-1.0~7.0V; (4)data output current:50mA; (5)power dissipation:1.4W.

The electrical characteristics(Ta=25) of the V53C808H35 can be summarized as:(1)input leakage current(any input pin):-10~10A; (2)output leakage current(for high-z stage):-10~10A; (3)Vcc supply current operating:160mA; (4)Vcc supply current,TTL standvy:2mA.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .