Purchase V53C8129H, In-stock V53C8129H From SeekIC.
Part Number: V53C8129H
Description: The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers ...
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V53C8129H
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General Description
V53C8129H General Description
The V53C8129H is a high speed 131,072 x 8 bit CMOS dynamic random access memory. The V53C8129H offers a combination of features: EDO Page Mode for high data bandwidth, fast usable speed, CMOS standby current.
All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Page Mode with extended data out operation allows random access of up to 256 columns (x8) bits within a row with cycle times as short as 14 ns. Because of static circuitry, the CAS clock is not in the critical timing path. The flow-through column address latches allow address pipelining while relaxing many critical system timing requirements for fast usable speed. These features make the V53C8129H ideally suited for graphics, digital signal processing and high performance peripherals.
V53C8129H Maximum Ratings
Ambient TemperatureUnder Bias ......................................................................... 10°C to +80°C
Storage Temperature (plastic)............................................................................ 55°C to +125°C
Voltage Relative to VSS .........................................................................................1.0 V to +7.0 V
Data Output Current ............................................................................................................ 50 mA
Power Dissipation.................................................................................................................. 1.0 W
Storage Temperature (plastic)............................................................................ 55°C to +125°C
Voltage Relative to VSS .........................................................................................1.0 V to +7.0 V
Data Output Current ............................................................................................................ 50 mA
Power Dissipation.................................................................................................................. 1.0 W
V53C8129H Features
128K x 8-bit organization
RAS access time: 35, 40, 45, 50 ns
EDO Page Mode supports sustained I/O data rates up to 71.5 MHz
Low power dissipation
• V53C8129H-50
- Operating Current: 135 mA max
- TTL Standby Current: 2.0 mA max
Low CMOS Standby Current: 1.0 mA max
Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability
Refresh Interval: 512 cycles/8 ms
Available in 26/24 pin 300 mil SOJ package
RAS access time: 35, 40, 45, 50 ns
EDO Page Mode supports sustained I/O data rates up to 71.5 MHz
Low power dissipation
• V53C8129H-50
- Operating Current: 135 mA max
- TTL Standby Current: 2.0 mA max
Low CMOS Standby Current: 1.0 mA max
Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability
Refresh Interval: 512 cycles/8 ms
Available in 26/24 pin 300 mil SOJ package
V53C8129H Connection Diagram
V53C8129H
PDF/DataSheet Download
- Datasheet: V53C8129H
- File Size: 205965 KB
- Manufacturer: MOSEL [Mosel Vitelic, Corp]
- Click here to Download
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