Features: 512K x 16-bit organizationRAS access time: 40, 45, 50, 60 nsFast Page Mode for a sustained data rate of 43 MHzDualCAS InputsPin-to-Pin compatible with 256Kx16Low power dissipationRead-Modify-Write, RAS-Only Refresh,CAS-Before-RAS RefreshRefresh Interval: 512 cycles/8 msAvailable in 40-pi...
V53C816H: Features: 512K x 16-bit organizationRAS access time: 40, 45, 50, 60 nsFast Page Mode for a sustained data rate of 43 MHzDualCAS InputsPin-to-Pin compatible with 256Kx16Low power dissipationRead-Modi...
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PinoutDescriptionThe V53C104AK-80 belongs to the V53C104A series.V53C104AK-80 is a high speed 262,...
DescriptionThe V53C104DK80 belongs to the V53C104D series.V53C104DK80 is a high speed 262,144*4 bi...
The V53C816H is a 524,288 x 16 bit high-performance CMOS dynamic random access memory. The V53C816H offers Fast Page mode with dual CAS inputs. An address, CAS and RAS input capacitances are reduced to one half when the 256Kx16 DRAM is used to construct the same memory density. The V53C816H has asymmetric address, 10-bit row and 9-bit column.
All inputs are TTL compatible. Fast Page Mode operation allows random access up to 512K x 16 bits, within a page, with cycle times as short as 23ns.The V53C816H is best suited for graphics, and buffer memory applications.