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Part Number: V53C8258H

 

 

 

 

Description: The V53C8258H is a high speed 262,144 x 8 bit CMOS dynamic random access memory. The V53C8258H offers ...


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V53C8258H General Description


The V53C8258H is a high speed 262,144 x 8 bit CMOS dynamic random access memory. The V53C8258H offers a combination of features: Page Mode with Extended Data Output for high data bandwidth, and Low CMOS standby current.

All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance. Page Mode with Extended Data Output operation allows random access of up to 512 (x8) bits within a row with cycle times as fast as 14 ns. Because of static circuitry, the CAS clock is not in the critical timing path. The flow-through column address latches allow address pipelining while relaxing many critical system timing requirements. The V53C8258H is ideally suited for graphics, digital signal processing and high-performance computing systems.

V53C8258H Maximum Ratings

Ambient Temperature Under Bias ............................................. 10°C to +80°C
Storage Temperature (plastic) ................................................ 55°C to +125°C
Voltage Relative to VSS ............................................................. 1.0 V to +7.0 V
Data Output Current .................................................................................. 50 mA
Power Dissipation ....................................................................................... 1.0 W

V53C8258H Features

 256K x 8-bit organization
 EDO Page Mode for a sustained data rateof 71 MHz
 RAS access time: 35, 40, 45, 50 ns
 Low power dissipation
 Read-Modify-Write, RAS-Only Refresh,CAS-Before-RAS Refresh capability
 Refresh Interval: 512 cycles/8 ms
 Available in 24 pin 300 mil Plastic DIP,26/24 pin 300 mil SOJ and 28-pin 300 milTSOP-I packages
 Single 5V±10% Power Supply
 TTL Interface

V53C8258H Connection Diagram

V53C8258H  Connection Diagram

V53C8258H datasheet

V53C8258H
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