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V54C3140

Features: 4 banks x 2Mbit x 16 organization 4 banks x 4Mbit x 8 organization 4 banks x 8Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Single Pulsed RAS Interface Data Mask for Read/Write Control Fo...

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V54C3140: Features: 4 banks x 2Mbit x 16 organization 4 banks x 4Mbit x 8 organization 4 banks x 8Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all sig...

V54C3140 Data Sheet

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Part Number:
V54C3140
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

4 banks x 2Mbit x 16 organization
4 banks x 4Mbit x 8 organization
4 banks x 8Mbit x 4 organization
High speed data transfer rates up to 166 MHz
Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge
Single Pulsed RAS Interface
Data Mask for Read/Write Control
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2, 3
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length:
   1, 2, 4, 8 for Sequential Type
   1, 2, 4, 8 for Interleave Type
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Random Column Address every CLK (1-N Rule)
Power Down Mode
Auto Refresh and Self Refresh
Refresh Interval: 4096 cycles/64 ms
Available in 60 PinWBGA
LVTTL Interface
Single +3.3 V ±0.3 V Power Supply


Specifications

Operating temperature range...............................................0 to 70 °C
Storage temperature range ............................................-55 to 150 °C
Input/output voltage.............................................. -0.3 to (VCC+0.3) V
Power supply voltage ....................................................... -0.3 to 4.6 V
Power dissipation ............................................................................1 W
Data out current (short circuit)......................................................50 mA


Description

The V54C3128(16/80/40)4V(BGA) is a four bank Synchronous DRAM organized as 4 banks x 2Mbit x 16, 4 banks x 4Mbit x 8, or 4 banks x 8Mbit x 4. The V54C3128(16/80/40)4V(BGA) achieves high speed data transfer rates up to 166 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock

All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.Operating the four memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 166 MHz is possible depending on burst length, CAS latency and speed grade of the V54C3128(16/80/40)4V(BGA) device.




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