Purchase V54C316162V, In-stock V54C316162V From SeekIC.
Part Number: V54C316162V
Description: The V54C316162V is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by...
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V54C316162V
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General Description
V54C316162V General Description
The V54C316162V is a 16,777,216 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 16 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control with the system clock. The CAS latency, burst length and burst sequence must be programmed into device prior to access operation.
V54C316162V Maximum Ratings
Operating temperature range .............................................0 to 70 °C
Storage temperature range .......................................... -55 to 150 °C
Input/output voltage ........................................... -0.3 to (VCC+0.3) V
Power supply voltage ..................................................... -0.3 to 4.6 V
Power dissipation ......................................................................... 1 W
Data out current (short circuit) .................................................. 50 mA
Storage temperature range .......................................... -55 to 150 °C
Input/output voltage ........................................... -0.3 to (VCC+0.3) V
Power supply voltage ..................................................... -0.3 to 4.6 V
Power dissipation ......................................................................... 1 W
Data out current (short circuit) .................................................. 50 mA
V54C316162V Features
JEDEC Standard 3.3V Power Supply
The V54C316162V is ideally suited for high performance graphics peripheral applications
Single Pulsed RAS Interface
Programmable CAS Latency: 2, 3
All Inputs are sampled at the positive going edge of clock
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave
UDQM & LDQM for byte masking
Auto & Self Refresh
4K Refresh Cycles/64 ms
Burst Read with Single Write Operation
The V54C316162V is ideally suited for high performance graphics peripheral applications
Single Pulsed RAS Interface
Programmable CAS Latency: 2, 3
All Inputs are sampled at the positive going edge of clock
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave
UDQM & LDQM for byte masking
Auto & Self Refresh
4K Refresh Cycles/64 ms
Burst Read with Single Write Operation
V54C316162V Connection Diagram
V54C316162V
PDF/DataSheet Download
- Datasheet: V54C316162V
- File Size: 329974 KB
- Manufacturer: MOSEL [Mosel Vitelic, Corp]
- Click here to Download
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