Purchase V54C333322V, In-stock V54C333322V From SeekIC.
Part Number: V54C333322V
Description: The V54C333322V is a 33,554,432 bits synchronous high data rate DRAM organized as 2 x 524,288 words by...
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V54C333322V
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General Description
V54C333322V General Description
The V54C333322V is a 33,554,432 bits synchronous high data rate DRAM organized as 2 x 524,288 words by 32 bits. The device is designed to comply with JEDEC standards set for synchronous DRAM products, both electrically and mechanically. Synchronous design allows precise cycle control with the system clock. The CAS latency, burst length and burst sequence must be programmed into device prior to access operation.
V54C333322V Maximum Ratings
Operating temperature range ...........................................0 to 70°C
Storage temperature range .........................................-55 to 150°C
Input/output voltage.......................................... -0.3 to (VCC+0.3) V
Power supply voltage ................................................... -0.3 to 4.6 V
Power dissipation ....................................................................... 1 W
Data out current (short circuit)................................................. 50 mA
Storage temperature range .........................................-55 to 150°C
Input/output voltage.......................................... -0.3 to (VCC+0.3) V
Power supply voltage ................................................... -0.3 to 4.6 V
Power dissipation ....................................................................... 1 W
Data out current (short circuit)................................................. 50 mA
V54C333322V Features
JEDEC Standard 3.3V Power Supply
The V54C333322V is ideally suited for high performance graphics peripheral applications
Single Pulsed RAS Interface
Programmable CAS Latency: 2, 3
All Inputs are sampled at the positive going edge of clock
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave
DQM 0-3 for Byte Masking
Auto & Self Refresh
2K Refresh Cycles/32 ms
Burst Read with Single Write Operation
The V54C333322V is ideally suited for high performance graphics peripheral applications
Single Pulsed RAS Interface
Programmable CAS Latency: 2, 3
All Inputs are sampled at the positive going edge of clock
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and Full Page for Sequential and 1, 2, 4, 8 for Interleave
DQM 0-3 for Byte Masking
Auto & Self Refresh
2K Refresh Cycles/32 ms
Burst Read with Single Write Operation
V54C333322V Connection Diagram
V54C333322V
PDF/DataSheet Download
- Datasheet: V54C333322V
- File Size: 127201 KB
- Manufacturer: MOSEL [Mosel Vitelic, Corp]
- Click here to Download
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