V55C2256164VB

Operating temperature range (commercial)0 to 70 °C
Operating temperature range (extended) -25 to 85 °C
Storage temperature range ...............     -55 to 150 °C
Input/output voltage ................      -0.3 to (V_CC+0.3) V
Power supply voltage ..........................       -0.3 to 3.6 V
Power dissipation ..........................................       0.7 W
Data out current (short circuit) ......................       50 mA
*Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

The V55C2256164VB is a four bank Synchronous DRAM organized as 4 banks x 4Mbit x 16. The V55C2256164VB achieves high speed data transfer rates up to 143 MHz by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
 
All of the control, address, data input and output circuits are synchronized with the positive edge of an externally supplied clock.

Operating the four memory banks in an interleaved fashion allows random access operation to occur at higher rate than is possible with standard DRAMs. A sequential and gapless data rate of up to 143 MHz is possible depending on burst length, CAS latency and speed grade of the device.