Features: • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 mA (CMOS input/output)2 mA (CMOS input/output, L version)• 35/45/55/70/85/100 ns access time• Equal access and cycle time• Single +2.2V to 2.7V Power Supply• Tri-state output• Automatic ...
V62C2162048L(L): Features: • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 mA (CMOS input/output)2 mA (CMOS input/output, L version)• 35/45/55/70/85/100 ns access time• Equal acce...
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Features: High-speed: 85, 100 ns Ultra low CMOS standby current of 2A (max.) Fully static operatio...
Features: • Ultra Low-power consumption ative: 20mA at 70ns and-by: 5 mA (CMOS input/output...
Features: • Low-power consumption Active: 25mA at 70ns Stand-by: 10 mA (CMOS input/output)2 ...

| Parameter |
Symbol |
Minimum |
Maximum |
Unit |
| Voltage on Any Pin Relative to Gnd |
Vt |
-0.5 |
+4.6 |
V |
| Power Dissipation |
PT |
- |
1.0 |
W |
| Storage Temperature (Plastic) |
Tstg |
-55 |
+150 |
0C |
| Temperature Under Bias |
Tbias |
-40 |
+85 |
0C |
The V62C2162048L(L) is a Low Power CMOS Static RAM organized as 131,072 words by 16 bits. Easy memory expansion is provided by an active LOW (CE) and (OE) pin.
This device has an automatic power-down mode feature when deselected. Separate Byte Enable controls (BLE and BHE) allow individual bytes to be accessed. BLE controls the lower bits I/O1 - I/O8. BHE controls the upper bits I/O9 - I/O16.
Writing to these devices is performed by taking Chip Enable (CE) with Write Enable (WE) and Byte Enable (BLE/BHE) LOW.
Reading from the device is performed by taking Chip Enable (CE) with Output Enable (OE) and Byte Enable (BLE/BHE) LOW while Write Enable (WE) is held HIGH.