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VEC2605

Features: • Best suited for DC/DC converters.• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.• 2.5V drive.• Mounting height 0.75mm.Pinout Specification...

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SeekIC No. : 004541084 Detail

VEC2605: Features: • Best suited for DC/DC converters.• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby e...

VEC2605 Data Sheet

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Part Number:
VEC2605
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Best suited for DC/DC converters.
• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
• 2.5V drive.
• Mounting height 0.75mm.






Pinout



Connection Diagram




Specifications

Absolute maximum ratings
(Pch) VDSS [V] 20
(Pch) VGSS [V] 10
(Pch) ID [A] 3
(Pch) PD [W] 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
(Nch) VDSS [V] 20
(Nch) VGSS [V] 10
(Nch) ID [A] 1
(Nch) PD [W] 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit
Electrical characteristics
(Pch) VGS(off) min to max [V] 0.5 to 1.3
(Pch) |yfs| typ [S] 5.4
(Pch) RDS(on)1 typ [] 0.044
(Pch) RDS(on)1 max [] 0.058
(Pch) VGS [V] 4
(Pch) ID [A] 2
(Pch) RDS(on)2 typ [] 0.051
(Pch) RDS(on)2 max [] 0.073
(Pch) VGS [V] 2.5
(Pch) ID [A] 1
(Pch) Ciss [pF] 570
(Pch) Qg [nC] 7.6
(Pch) Operation frequency [kHz] 2000
(Nch) VGS(off) min to max [V] 0.4 to 1.4
(Nch) |yfs| typ [S] 1.2
(Nch) RDS(on)1 typ [] 0.38
(Nch) RDS(on)1 max [] 0.5
(Nch) VGS [V] 4
(Nch) ID [A] 0.5
(Nch) RDS(on)2 typ [] 0.54
(Nch) RDS(on)2 max [] 0.76
(Nch) VGS [V] 2.5
(Nch) ID [A] 0.3
(Nch) Ciss [pF] 115
(Nch) Qg [nC] 1.5
(Nch) Operation frequency [kHz] 300


Parameter Symbol Conditions P-channel N-channel Unit
Drain-to-Source Voltage VDSS -20 20 V
Gate-to-Source Voltage VGSS ±10 ±10 V
Drain Current (DC) ID -1 3 A
Drain Current (Pulse) IDP PW10ms, duty cycle1% -4 12 A
Allowable Power Dissipation PD Mounted on a ceramic board (900mm250.8mm)1unit 0.8 0.9 W
Channel Temperature Tch 150
Storage Temperature Tstg --55 to +150





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