Features: • Best suited for DC/DC converters.• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.• 2.5V drive.• Mounting height 0.75mm.Pinout Specification...
VEC2605: Features: • Best suited for DC/DC converters.• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby e...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
• Best suited for DC/DC converters.
• The VEC2605 incorporates a P-channel MOSFET and an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
• 2.5V drive.
• Mounting height 0.75mm.

| Absolute maximum ratings | |
|---|---|
| (Pch) VDSS [V] | 20 |
| (Pch) VGSS [V] | 10 |
| (Pch) ID [A] | 3 |
| (Pch) PD [W] | 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
| (Nch) VDSS [V] | 20 |
| (Nch) VGSS [V] | 10 |
| (Nch) ID [A] | 1 |
| (Nch) PD [W] | 0.9
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
| Electrical characteristics | |
|---|---|
| (Pch) VGS(off) min to max [V] | 0.5 to 1.3 |
| (Pch) |yfs| typ [S] | 5.4 |
| (Pch) RDS(on)1 typ [] | 0.044 |
| (Pch) RDS(on)1 max [] | 0.058 |
| (Pch) VGS [V] | 4 |
| (Pch) ID [A] | 2 |
| (Pch) RDS(on)2 typ [] | 0.051 |
| (Pch) RDS(on)2 max [] | 0.073 |
| (Pch) VGS [V] | 2.5 |
| (Pch) ID [A] | 1 |
| (Pch) Ciss [pF] | 570 |
| (Pch) Qg [nC] | 7.6 |
| (Pch) Operation frequency [kHz] | 2000 |
| (Nch) VGS(off) min to max [V] | 0.4 to 1.4 |
| (Nch) |yfs| typ [S] | 1.2 |
| (Nch) RDS(on)1 typ [] | 0.38 |
| (Nch) RDS(on)1 max [] | 0.5 |
| (Nch) VGS [V] | 4 |
| (Nch) ID [A] | 0.5 |
| (Nch) RDS(on)2 typ [] | 0.54 |
| (Nch) RDS(on)2 max [] | 0.76 |
| (Nch) VGS [V] | 2.5 |
| (Nch) ID [A] | 0.3 |
| (Nch) Ciss [pF] | 115 |
| (Nch) Qg [nC] | 1.5 |
| (Nch) Operation frequency [kHz] | 300 |
| Parameter | Symbol | Conditions | P-channel | N-channel | Unit |
| Drain-to-Source Voltage | VDSS | -20 | 20 | V | |
| Gate-to-Source Voltage | VGSS | ±10 | ±10 | V | |
| Drain Current (DC) | ID | -1 | 3 | A | |
| Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | -4 | 12 | A |
| Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm250.8mm)1unit | 0.8 | 0.9 | W |
| Channel Temperature | Tch | 150 | |||
| Storage Temperature | Tstg | --55 to +150 | |||