Features: • The best suited for inverter applications.• The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,thereby enabling high-density mounting.• Low voltage drive.• Mounting height 0.75mm.PinoutSpecifications A...
VEC2609: Features: • The best suited for inverter applications.• The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,thereby enabling high-density m...
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Aluminum Electrolytic Capacitors - SMD 6.3 Volts 22uF 20% 4x5.3
• The best suited for inverter applications.
• The VEC2609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance,thereby enabling high-density mounting.
• Low voltage drive.
• Mounting height 0.75mm.

| Absolute maximum ratings | |
|---|---|
| (Pch) VDSS [V] | 12 |
| (Pch) VGSS [V] | 8 |
| (Pch) ID [A] | 2 |
| (Pch) PD [W] | 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
| (Nch) VDSS [V] | 30 |
| (Nch) VGSS [V] | 20 |
| (Nch) ID [A] | 1.4 |
| (Nch) PD [W] | 0.8
When mounted on ceramic substrate (900mm²*0.8mm) 1unit |
| Electrical characteristics | |
|---|---|
| (Pch) VGS(off) min to max [V] | 0.3 to 1.0 |
| (Pch) |yfs| typ [S] | 4.5 |
| (Pch) RDS(on)1 typ [] | 0.122 |
| (Pch) RDS(on)1 max [] | 0.172 |
| (Pch) VGS [V] | 2.5 |
| (Pch) ID [A] | 0.8 |
| (Pch) RDS(on)2 typ [] | 0.162 |
| (Pch) RDS(on)2 max [] | 0.275 |
| (Pch) VGS [V] | 1.8 |
| (Pch) ID [A] | 0.4 |
| (Pch) Ciss [pF] | 450 |
| (Pch) Qg [nC] | 6.5 |
| (Nch) VGS(off) min to max [V] | 1.2 to 2.6 |
| (Nch) |yfs| typ [S] | 1.1 |
| (Nch) RDS(on)1 typ [] | 0.23 |
| (Nch) RDS(on)1 max [] | 0.3 |
| (Nch) VGS [V] | 10 |
| (Nch) ID [A] | 0.7 |
| (Nch) RDS(on)2 typ [] | 0.4 |
| (Nch) RDS(on)2 max [] | 0.56 |
| (Nch) VGS [V] | 4 |
| (Nch) ID [A] | 0.4 |
| (Nch) Ciss [pF] | 65 |
| (Nch) Qg [nC] | 2.5 |
| Parameter | Symbol | Conditions | N-channel | P-channel | Unit |
| Drain-to-Source Voltage | VDSS | 30 | -12 | V | |
| Gate-to-Source Voltage | VGSS | ±20 | ±8 | V | |
| Drain Current (DC) | ID | 1.4 | -2 | A | |
| Drain Current (Pulse) | IDP | PW10ms, duty cycle1% | 5.6 | -8 | A |
| Allowable Power Dissipation | PD | Mounted on a ceramic board (900mm250.8mm)1unit | 0.8 | W | |
| Total Dissipation | PT | Mounted on a ceramic board (900mm250.8mm) | 1.0 | W | |
| Channel Temperature | Tch | 150 | |||
| Storage Temperature | Tstg | -55 to +150 | |||