DescriptionThe VFT1080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.VFT1080C has six features. (1)Trench MOS schottky tec...
VFT1080C: DescriptionThe VFT1080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-t...
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Schottky (Diodes & Rectifiers) 10A 45V DUAL TrenchMOS
The VFT1080C is designed as one kind of dual trench MOS barrier schottky rectifiers for use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
VFT1080C has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Solder bath temperature 275°C maximum, 10s, per JESD 22-B106. (5)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. (6)Halogen-free according to IEC 61249-2-21 definition. Those are all the main features.
Some absolute maximum ratings of VFT1080C have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 80V. (2)Its maximum average forward rectified current would be 10A per device and 5A per diode. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 80A. (4)Its voltage rate of change (rated Vr) would be 10000V/us. (5)Its isolation voltage would be 1500V. (6)Its operating temperature and storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some electrical characteristics of VFT1080C are concluded as follow. (1)Its instantaneous forward voltage per diode would be typ 0.54V at If=3A, Ta=25°C and would be typ 0.63 and max 0.72V at If=5A, Ta=25°C and would be typ 0.49V at If=3A, Ta=125°C and would be typ 0.57V and max 0.66V at If=5A, Ta=125°C. (2)Its reverse current per diode would be typ 12uA and max 400uA at Ta=25°C, Vr=80V and would be typ 6mA and max 15mA at Ta=125°C, Vr=80V. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information of VFT1080C please contact us for details. Thank you!