Purchase VI30120S, In-stock VI30120S From SeekIC.
MFG:Vishay Package Cooled:TO-262AA D/C:08+
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VI30120S
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DataSheet
General Description
VI30120S Maximum Ratings
| PARAMETER | SYMBOL | V30120S | VF30120S | VB30120S | VI30120S | UNIT |
| Maximum repetitive peak reverse voltage | VRRM | 120 | V | |||
| Maximum average forward rectified current (Fig. 1) | IF(AV) | 30 | A | |||
| Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode |
IFSM | 300 | A | |||
| Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
| Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 | ||||
VI30120S Features
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package)
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
VI30120S Typical Application
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
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