Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 (for TO-263AB package)• Solder dip 260, 40 s (for TO-220AB and TO-...
VI30200C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...
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For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
PARAMETER |
SYMBOL |
V30200C |
VB30200C |
VI30200C |
UNIT |
Maximum repetitive peak reverse voltage |
VRRM |
200 |
V | ||
Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) |
30 15 |
A | ||
Peak forward surge current 10 ms single half sine-wave superimposed on rated load per diode |
IFSM |
250 |
A | ||
Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 |
EAS |
100 |
mJ | ||
Peak repetitive reverse current at tp = 2 s, 1 kHz per diode |
IRRM |
1.0 |
A | ||
Voltage rate of change (rated VR) |
dv/dt |
10000 |
V/s | ||
Operating junction and storage temperature range |
TJ,TSTG |
- 40 to + 150 |