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VMO580-02F: MOSFET HiperFET 200V 580A

VMO580-02F Data Sheet

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Part Number:: VMO580-02F
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2025/12/4

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	200 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	580 A
Configuration :	Single Dual Source	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Screw	Package / Case :	Y3-Li-4
Packaging :	Box

Description

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Configuration : Single Dual Source
Packaging : Box
Mounting Style : Screw
Continuous Drain Current : 580 A
Package / Case : Y3-Li-4

Features:

• HiPerFET^TM technology
- low R_DSon
- dv/dt ruggedness
- fast intrinsic reverse diode
• package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate

Application

• converters with high power density for
- main and auxiliary AC drives of electric vehicles
- DC drives
- power supplies

Parameters:

Technical/Catalog Information	VMO580-02F
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	580A
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 430A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Bulk
Gate Charge (Qg) @ Vgs	2750nC @ 10V
Package / Case	Y3-Li
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VMO580 02F VMO58002F

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