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VMO580-02F

MOSFET HiperFET 200V 580A

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SeekIC No. : 00164447 Detail

VMO580-02F: MOSFET HiperFET 200V 580A

VMO580-02F Data Sheet

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Part Number:
VMO580-02F
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 580 A
Configuration : Single Dual Source Maximum Operating Temperature : + 150 C
Mounting Style : Screw Package / Case : Y3-Li-4
Packaging : Box    

Description

Resistance Drain-Source RDS (on) :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Configuration : Single Dual Source
Packaging : Box
Mounting Style : Screw
Continuous Drain Current : 580 A
Package / Case : Y3-Li-4


Features:

• HiPerFETTM technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
• package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate


Application

• converters with high power density for
- main and auxiliary AC drives of electric vehicles
- DC drives
- power supplies


Parameters:

Technical/Catalog InformationVMO580-02F
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C580A
Rds On (Max) @ Id, Vgs3.8 mOhm @ 430A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingBulk
Gate Charge (Qg) @ Vgs2750nC @ 10V
Package / CaseY3-Li
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VMO580 02F
VMO58002F



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