VMO550-01F

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.0021 Ohms
Mounting Style : Screw
Continuous Drain Current : 590 A
Package / Case : Y3-DCB


Features:

• International standard package
• Direct Copper Bonded Al₂O₃ ceramic base plate
• Isolation voltage 3600 V~
• Low R_DS(on) HDMOS^TM process
• Low package inductance for high speed switching
• Kelvin Source contact for easy drive


Application

• AC motor speed control for electric vehicles
• DC servo and robot drives
• Switched-mode and resonant-mode power supplies
• DC choppers


Parameters:

Technical/Catalog Information	VMO550-01F
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Chassis Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	590A
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	50000pF @ 25V
Power - Max	2200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	2000nC @ 10V
Package / Case	Y3-DCB
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	VMO550 01F VMO55001F