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VN20AN

Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 33 A IR Reverse Output Current -33 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V ISTAT S...

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SeekIC No. : 004542381 Detail

VN20AN: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) 33 A IR Reverse Output Current -33...

VN20AN Data Sheet

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Part Number:
VN20AN
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

 Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.)

 33 A

IR

 Reverse Output Current

-33

A

IIN

Input Current

 ±10 mA

-VCC

 Reverse Supply Current

-4

V

ISTAT

Status Current (sink)

 ±10 mA
VESD

Electrostatic Discharge (1.5K,100pF )

 2000 V

Ptot

Power Dissipation at TC25°C

100

W

Tj

Junction operating temperature

 -40 to 150

Tstg

Storage Temperature

 -55 to 150




Description

The VN20AN is a monolithic device made using SGS-THOMSON Vertical Intelligent Power Technology, intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the VN20AN chip from over temperature and short circuit. The diagnostic output indicates an over temperature status.Fast turn-off of inductive load is achieved by negative (-18V) load voltage at turn-off.




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