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VN21SP

Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) at Tc = 85 23 A IR Reverse Output Current at Tc = 85 -23 A IIN Input Current ±10 mA -VCC Reverse Supply Current ...

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VN21SP: Specifications Symbol Parameter Value Unit V(BR)DSS Drain-Source Brekdown Voltage 60 V IOUT Output Current (cont.) at Tc = 85 23 A IR Reverse Output Cu...

VN21SP Data Sheet

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Part Number:
VN21SP
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/18

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Product Details

Description



Specifications

Symbol

Parameter

Value

Unit

V(BR)DSS

 Drain-Source Brekdown Voltage

60

V

IOUT

Output Current (cont.) at Tc = 85

23 A

IR

 Reverse Output Current at Tc = 85

-23

A

IIN

Input Current

 ±10 mA

-VCC

 Reverse Supply Current

-4

V

ISTAT

Status Current

 ±10 mA
VESD

Electrostatic Discharge (1.5K,100pF )

 2000 V

Ptot

Power Dissipation at TC=85°C

48

W

Tj

Junction operating temperature

 -40 to 150

Tstg

Storage Temperature

 -55 to 150




Description

The VN21SP is a monolithic device made using STMicroelectronics VIPower Technology,intended for driving resistive or inductive loads with one side grounded.

Built-in thermal shut-down protects the VN21SP chip from over temperature and short circuit.The open drain diagnostic output indicates: open load in off state, and in on state, output shorted to VCC and overtemperature. Fast demagnetization of inductive loads is archivied by negative (-18V) load voltage at turn-off.




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