VNW50N04

Gate-Source Breakdown Voltage :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 50 A
Package / Case : TO-247
Resistance Drain-Source RDS (on) : 0.012 Ohms
Drain-Source Breakdown Voltage : 42 V


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (Vin = 0)	Internally Clamped	V
Vin	Input Voltage	18	V
ID	Drain Current	Internally Limited	A
IR	Reverse DC Output Current	-100	A
Vesd	Electrostatic Discharge (C= 100 pF, R=1.5 K)	2000	V
Ptot	Total Dissipation at Tc = 25 oC	208	W
Tj	Operating Junction Temperature	Internally Limited
Tc	Case Operating Temperature	Internally Limited
TSTG	Storage Temperature	-55 to 150

Description

The VNW50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback of VNW50N04 can be detected by monitoring the voltage at the input pin.

Parameters:

Technical/Catalog Information	VNW50N04
Vendor	STMicroelectronics
Category	Integrated Circuits (ICs)
Package / Case	TO-247-3
Mounting Type	Through Hole
Type	Low Side
Voltage - Supply	-
On-State Resistance	12 mOhm
Current - Output / Channel	-
Current - Peak Output	50A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	VNW50N04 VNW50N04 497 3320 5 ND 49733205ND 497-3320-5