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VP1008B

MOSFET 100V 5 OHM

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SeekIC No. : 00157319 Detail

VP1008B: MOSFET 100V 5 OHM

VP1008B Data Sheet

floor Price/Ceiling Price

US $ 105.91~159.79 / Piece | Get Latest Price
Part Number:
VP1008B
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~19
  • 19~25
  • 25~50
  • Unit Price
  • $159.79
  • $113.34
  • $105.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/8

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.79 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Stud
Package / Case : TO-205AD Packaging : Bulk    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 5 Ohms
Continuous Drain Current : 0.79 A
Mounting Style : Stud
Package / Case : TO-205AD


Features:

`High-Side Switching
`Low On-Resistance: 2.5
`Moderate Threshold: 3.4 V
`Fast Switching Speed: 40 ns
`Low Input Capacitance: 75 pF




Application

· Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories, Transistors, etc.
· Battery Operated Systems
· Power Supply, Converter Circuits
· Motor Control


Specifications

Parameter
Symbol
VP0808B
VP0808L
VP0808M
VP1008B
VP1008L
VP1008M
Unit
Drain-Source Voltage
VDS
80
80
80
100
100
100
V
Gate-Source Voltage
VGS
±20
±30
±30
±20
±30
±30
Continuous Drain Current (TJ = 150) TA=25
ID
0.88
-0.28
-0.31
-0.79
-0.28
-0.31
A
TA=100
0.53
-0.17
-0.20
-0.53
-0.17
-0.20
Pulsed Drain Current
IDM
3
3
3
3
3
3
Power Dissipation TA=100
PD
6.25
0.8
1
6.25
0.8
1
W
 
2.5
0.32
1.4
2.5
0.32
0.4
Maximum Junction-to-Ambient
RthJA
256
125
156
125
/W
Maximum Junction-to-Case
RthJC
20
20
Operating Junction and
Storage Temperature Range
TJ,TSTG
55 to 150



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