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VQ1000J

MOSFET QD 60V 0.225A

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SeekIC No. : 00166169 Detail

VQ1000J: MOSFET QD 60V 0.225A

VQ1000J Data Sheet

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Part Number:
VQ1000J
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.225 A
Resistance Drain-Source RDS (on) : 5500 mOhms Configuration : Quad
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PDIP-14    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Configuration : Quad
Continuous Drain Current : 0.225 A
Resistance Drain-Source RDS (on) : 5500 mOhms
Package / Case : PDIP-14


Features:

 Low On-Resistance: 2.5
 Low Threshold: 2.1 V
 Low Input Capacitance: 22 pF
 Fast Switching Speed: 7 ns
 Low Input and Output Leakage


Application

 Direct Logic-Level Interface: TTL/CMOS
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
 Battery Operated Systems
 Solid-State Relays


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter
Symbol
Single
Total Quad
BS170
Unit
VQ1000J
VQ1000P
VQ1000J/P
Drain-Source Voltage
VDS
60
60

60
V
Gate-Source Voltage-Non-Repetitive
VGSM
±30

 

±25
Gate-Source Voltage-Continuous
VGS
±20
±20

±20
Continuous Drain Currentd
(TJ = 175)		 TA = 25
ID
0.225
0.225

0.5
A
TA = 100
0.14
0.14

0.175
Pulsed Drain Current
IDM
1
1


Power Dissipation TA = 25
PD
1.3
1.3
2
0.83
W
TA = 100
0.52
0.52
0.8

Thermal Resistance, Junction-to-Ambient
RthJA
96
96
62.5
156
/W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 155



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