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VQ1004J

MOSFET QD 60V 0.46A

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SeekIC No. : 00166285 Detail

VQ1004J: MOSFET QD 60V 0.46A

VQ1004J Data Sheet

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Part Number:
VQ1004J
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.46 A
Resistance Drain-Source RDS (on) : 3.5 Ohms Configuration : Quad
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PDIP-14    

Description

Packaging :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 60 V
Configuration : Quad
Continuous Drain Current : 0.46 A
Resistance Drain-Source RDS (on) : 3.5 Ohms
Package / Case : PDIP-14


Features:

 Low On-Resistance: 1.3
 Low Threshold: 1.7 V
 Low Input Capacitance: 35 pF
 Fast Switching Speed: 8 ns
 Low Input and Output Leakage


Application

 Direct Logic-Level Interface: TTL/CMOS
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
 Battery Operated Systems
 Solid-State Relays


Pinout

Connection Diagram


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter
Symbol
2N6660
Single
Total Quad
Unit
VQ1004J
VQ1004P
VQ1004J/P
Drain-Source Voltage
VDS
60
60
60

V
Gate-Source Voltage-Non-Repetitive
VGSM
±30
±30
±30

Gate-Source Voltage-Continuous
VGS
±20
±20
±20

Continuous Drain Currentd
(TJ = 175)		 TC = 25
ID
0.46
0.46
0.46

A
TC= 125
0.26
0.26
0.26

Pulsed Drain Current
IDM
2
2
2

Power Dissipation TC= 25
PD
1.3
1.3
1.3
2
W
TC = 25
0.52
0.52
0.52
0.8
Thermal Resistance, Junction-to-Ambient
RthJA
96
96
96
62.5
/W
Thermal Resistance, Junction-to-Case
RthJA
20
      
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 155



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