VQ1004P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 60 V
Configuration : Quad
Resistance Drain-Source RDS (on) : 3.5 Ohms
Continuous Drain Current : +/- 0.46 A
Package / Case : TO-205AD-14


Features:

 Low On-Resistance: 1.3
 Low Threshold: 1.7 V
 Low Input Capacitance: 35 pF
 Fast Switching Speed: 8 ns
 Low Input and Output Leakage


Application

 Direct Logic-Level Interface: TTL/CMOS
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
 Battery Operated Systems
 Solid-State Relays


Pinout




Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	2N6660	Single		Total Quad	Unit
				VQ1004J	VQ1004P	VQ1004J/P
Drain-Source Voltage		VDS	60	60	60		V
Gate-Source Voltage-Non-Repetitive		VGSM	±30	±30	±30
Gate-Source Voltage-Continuous		VGS	±20	±20	±20
Continuous Drain Currentd (TJ = 175)	TC = 25	ID	0.46	0.46	0.46		A
	TC= 125		0.26	0.26	0.26
Pulsed Drain Current		IDM	2	2	2
Power Dissipation	TC= 25	PD	1.3	1.3	1.3	2	W
	TC = 25		0.52	0.52	0.52	0.8
Thermal Resistance, Junction-to-Ambient		RthJA	96	96	96	62.5	/W
Thermal Resistance, Junction-to-Case		RthJA	20
Operating Junction and Storage Temperature Range		TJ, Tstg	-55 to 155