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VQ1006P

MOSFET 90V QUAD N-CHANNEL MOSFET

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SeekIC No. : 00156595 Detail

VQ1006P: MOSFET 90V QUAD N-CHANNEL MOSFET

VQ1006P Data Sheet

floor Price/Ceiling Price

US $ 55.08~64.79 / Piece | Get Latest Price
Part Number:
VQ1006P
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~13
  • 13~25
  • 25~50
  • 50~100
  • Unit Price
  • $64.79
  • $61.55
  • $58.31
  • $55.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 90 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.4 A
Resistance Drain-Source RDS (on) : 4 Ohms Configuration : Quad
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PDIP-14 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 0.4 A
Configuration : Quad
Resistance Drain-Source RDS (on) : 4 Ohms
Drain-Source Breakdown Voltage : 90 V
Package / Case : PDIP-14


Features:

• Low On-Resistance: 3.6


Specifications

Parameter Symbol VN0808L VN0808LS VQ1006P Unit
Single Total Quad
Drain-Source Voltage VDS 80 80  90   V
Gate-Source Voltage VGS ±30 ±30 ±20   
Continuous Drain Current(TJ = 150) TA= 25 ID 0.3 0.33

0.4 

   A
TA= 100 0.19 0.21  0.23  
Pulsed Drain Currenta IDM 1.9 1.9  2  
Power Dissipation TA= 25 PD 0.8 0.9  1.3 2  W
TA= 100 0.32 0.4 0.52   0.8
Thermal Resistance, Junction-to-Ambient RthJA 156 139 96   62.5 /W
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150
Notes
a. Pulse width limited by maximum junction temperature.


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