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VQ2004J

MOSFET Quad 60V 0.41A

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SeekIC No. : 00166717 Detail

VQ2004J: MOSFET Quad 60V 0.41A

VQ2004J Data Sheet

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Part Number:
VQ2004J
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 0.41 A
Resistance Drain-Source RDS (on) : 5 Ohms Configuration : Quad
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : PDIP-14    

Description

Packaging :
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : - 60 V
Configuration : Quad
Resistance Drain-Source RDS (on) : 5 Ohms
Continuous Drain Current : 0.41 A
Package / Case : PDIP-14


Features:

 High-Side Switching
 Low On-Resistance: 2.5
 Moderate Threshold: 3.4 V
 Fast Switching Speed: 40 ns
 Low Input Capacitance: 75 pF


Application

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control


Pinout

Connection Diagram


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter
Symbol
Single
Total Quad
Unit
Drain-Source Voltage
VDS
60

V
Gate-Source Voltage
VGS
±30

Continuous Drain Currentd
(TJ = 150)		 TA = 25
ID
-0.41

A
TA= 100
-0.23

Pulsed Drain Current
IDM
-3

Power Dissipation TA= 25
PD
1.3
2
W
TA = 100
0.52
0.8
Thermal Resistance, Junction-to-Ambient
RthJA
96
62.5
/W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 155



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