VSB2200S

The VSB2200S is designed as one kind of high-voltage trench MOS barrier schottky rectifiers for use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application.

VSB2200S has six features. (1)Trench MOS schottky technology. (2)Low forward voltage drop, low power losses. (3)High efficiency operation. (4)Solder bath temperature 275°C max. 10s, per JESD 22-B106. (5)Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC. (6)Halogen-free according to IEC 61249-2-21 definition. Those are all the main features.

Some absolute maximum ratings of VSB2200S have been concluded into several points as follow. (1)Its maximum repetitive peak reverse voltage would be 200V. (2)Its maximum average forward rectified current would be 2.0A. (3)Its peak forward surge current 8.3ms single half sine-wave superimposed on rated load would be 40A. (4)Its voltage rate of change (rated Vr) would be 10000V/us. (5)Its operating junction and storage temperature range would be from -40°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VSB2200S are concluded as follow. (1)Its breakdown voltage would be typ 200V. (2)Its instantaneous forward voltage would be typ 0.97V and max 1.23V at If=2.0A, Ta=25°C and would be typ 0.65V and max 0.73V at If=2.0A, Ta=125°C. (3)Its reverse current per diode would be typ 0.8uA and max 40uA at Ta=25°C and would be typ 0.6mA and max 4mA at Ta=125°C. (4)Its typical junction capacitance would be typ 110pF. (5)Its typical thermal resistance would be 88°C/W for junction to ambient. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!