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VSMF4710

Features: • Package type: surface mount• Package form: PLCC-2• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75• Peak wavelength: p = 870 nm• High reliability• High radiant power• High radiant intensity• Angle of half intensity: = ± 60°• Low for...

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SeekIC No. : 004543658 Detail

VSMF4710: Features: • Package type: surface mount• Package form: PLCC-2• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75• Peak wavelength: p = 870 nm• High reliability• High...

VSMF4710 Data Sheet

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Part Number:
VSMF4710
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Package type: surface mount
• Package form: PLCC-2
• Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75
• Peak wavelength: p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 60°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation band width: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors




Specifications

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V
Forward current IF 100 mA
Peak forward current tp/T = 0.5, tp = 100 s IFM 200 mA
Surge forward current tp = 100 s IFSM 1 A
Power dissipation PV 160 mW





Description

High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero

VSMF4710 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a PLCC-2 package for surface mounting (SMD).






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