VTS__86

VTS__86 Large area planar silicon photodiodes suitable for use in the photovoltatic mode, but use in the photovoltatic mode, but may be used with a small reverse bias.The low capacitance of these units permmits fast response time.These cells have moderate shunt resistance which provides low offset gain in transimpedance op-amp circuits. Cells habe solderable contacts and are available with or without flexible flying leads.Devices with leads are acrylic(plastic) coated.

The absolute maximum ratings and elelctro-optical specifications of VTS__86 can be summerized as:(1): storage temperature is -40 to 150(series 20,31) or is -40 to 105(series 30); (2): operating temperature is -40 to 125(series 20,31) or is -40 to 105(series 30); (3): short circuit current(Isc) is 65 uA min,85 uA typ when H is 100fc, 2850K; (4): Isc temp.coefficient(TC Isc) is 0.20%/ typ(2850K); (5): short circuit current(Isc) is 5.5 uA typ(100mW/cm2,940 nm); (6): open circuit voltage(Voc) is 0.33 V typ(H is 100 fc, 2850K); (7): Voc temp.coefficent(TC Voc)  is -2.0 mV/ typ (2850K); (8): dark current(ID) is 10 nA typ and 100 nA max(H is 0 , VR is 100 mV); (9): shunt resistance(RSH) is 6.0 M ohms typ(H is 0, V is 10 mV); (10): spectral application range is 400 nm min and 1100 nm max; (11): sensitivity(SR) is 0.55A/W at peak.

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