VUB120-12NO2

IGBT Modules 120 Amps 1200V

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SeekIC No. : 00141722 Detail

VUB120-12NO2: IGBT Modules 120 Amps 1200V

floor Price/Ceiling Price

Part Number:
VUB120-12NO2
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/2/22

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Single
Collector- Emitter Voltage VCEO Max : 1200 V Continuous Collector Current at 25 C : 140 A
Maximum Operating Temperature : + 150 C Package / Case : V2-Pack
Packaging : Bulk    

Description

Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Power Dissipation :
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Single
Packaging : Bulk
Continuous Collector Current at 25 C : 140 A
Package / Case : V2-Pack


Description

The VUB25-12NO2 is designed as three phase rectifier bridge with IGBT and fast recovery diode for braking system. Typical applications is drive Inverters with brake system.

VUB25-12NO2 has five features. (1)Soldering connections for PCB mounting. (2)Isolation voltage 3600V. (3)Ultrafast diode. (4)Convenient package outline UL registered E 72873. (5)Case and potting UL94 V-0. Those are all the main features.

Some absolute maximum ratings of VUB25-12NO2 have been concluded into several points as follow. (1)For the rectifier diodes its Vrrm would be 1200V. (2)Its IdAVM would be 188A. (3)Its Ifsm would be 1100A at Tvj=45°C and would be 960A at Tvj=150°C. (4)Its I2t would be 6050A at Tvj=45°C and would be 4610A at Tvj=150°C. (5)Its Ptot would be 160W at Tc=25°C per diode. (6)For the IGBT its Vces would be 1200V. (7)Its Vge would be +/-20V. (8)Its Ic would be 140A at Tc=25°C DC and would be 100A at Tc=80°C DC. (9)Its Icm would be 280A. (10)Its Ptot would be 570W at Tc=25°C. (11)For the fast recovery diode its Vrrm would be 1200V. (12)Its Ifav would be 34A. (13)Its Ifrms would be 48A. (14)Its Ifsm would be 200A at Tvj=45°C and would be 180A at Tvj=150°C. (15)Its Ptot would be 140W. (16)For the module its Tvj would be from -40°C to 150°C. (17)Its Tvjm would be 150°C. (18)Its storage temperature range would be from -40°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of VUB25-12NO2 are concluded as follow. (1)Its Ir would be 0.3mA at Tvj=25°C and it would be 5mA at Tvj=150°C. (2)Its Vf would be 1.46V. (3)Its Vt0 would be 0.87V for power loss calculations only. And so on. If you have any question or suggestion or want to know more information about VUB25-12NO2 please contact us for details. Thank you!




Parameters:

Technical/Catalog InformationVUB120-12NO2
VendorIXYS
CategoryDiscrete Semiconductor Products
Diode Type Three Phase - IGBT with Diode
Package / CaseV2-PAK
PackagingBulk
Reverse Recovery Time (trr)-
SpeedStandard Recovery >500ns, > 200mA (Io)
Current - DC Forward (If)188A
Voltage - Peak Reverse (Max)1200V
Mounting TypePCB
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names VUB120 12NO2
VUB12012NO2



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