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W28F321TB

Features: • 32M Density with 16 Bit I/O Interface• High-Performance Reads− 70/25 nS 8-Word Page Mode• Configurative 4-Plane Dual Work− Flexible Partitioning− Read operations during Block Erase or (Page Buffer) Program− Status Register for Each Partition...

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W28F321TB: Features: • 32M Density with 16 Bit I/O Interface• High-Performance Reads− 70/25 nS 8-Word Page Mode• Configurative 4-Plane Dual Work− Flexible Partitioning− Read...

W28F321TB Data Sheet

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Part Number:
W28F321TB
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• 32M Density with 16 Bit I/O Interface
• High-Performance Reads
− 70/25 nS 8-Word Page Mode
• Configurative 4-Plane Dual Work
− Flexible Partitioning
− Read operations during Block Erase or (Page Buffer) Program
− Status Register for Each Partition
• Low Power Operation
− 2.7V Read and Write Operations
− VDDQ for Input/Output Power Supply Isolation
− Automatic Power Savings Mode Reduces ICCR in Static Mode
• Enhanced Code + Data Storage
− 5 S Typical Erase/Program Suspends
• OTP (One Time Program) Block
− 4-Word Factory-Programmed Area
− 4-Word User-Programmable Area
• High Performance Program with Page Buffer
− 16-Word Page Buffer
− 5 S/ Word (Typ.) at 12V VPP
• Operating Temperature
− -40°C to +85°C
• CMOS Process (P-type silicon substrate)
• Flexible Blocking Architecture
− Eight 4k-word Parameter Blocks
− Sixty-three 32k-word Main Blocks
− Top or Bottom Parameter Location
• Enhanced Data Protection Features
− Individual Block Lock and Block Lock-Down with Zero-Latency
− All blocks are locked at power-up or device reset
− Absolute Protection with VPP VPPLK
− Block Erase, Full Chip Erase, (Page Buffer) Word Program Lockout during Power Transitions
• Automated Erase/Program Algorithms
− 3.0V Low-Power 11 S/ Word (Typ.) Programming
− 12V No Glue Logic 9 S/ Word (Typ.) Production Programming and 0.5s Erase (Typ.)
• Cross-Compatible Command Support
− Common Flash Interface (CFI)
− Basic Command Set
• Extended Cycling Capability
− Minimum 100,000 Block Erase Cycles
• Chip-Size Packaging
− 0.75 mm pitch 48-Ball TFBGA(7mm x 7mm)
• ETOX™ Flash Technology
• No designed or rated as radiation hardened
* ETOX is a trademark of Intel Corporation.


Specifications

Operating Temperature
During Read, Erase and Program ..................................................................................... -40°C to +85°C(1)
Storage Temperature
During under Bias ................................................................................................................ -40°C to +85°C
During non Bias .............................. .................................................................................. .. -65°C to +125°C
Voltage On Any Pin
(except VDD and VPP) ......... .......................................................................................... -0.5V to VDD +0.5V(2)
VDD and VDDQ Supply Voltage................................................................................................. -0.2V to +3.9V(2)
VPP Supply Voltage..................................................................................................... .... -0.2V to +12.6V(2,3,4)
Output Short Circuit Current............. .............................................................................. ...................100 mA(5)
*WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.
Notes:
1. Operating temperature is for extended temperature product defined by this specification.
2. All specified voltages are with respect to VSS. Minimum DC voltage is -0.5V on input/output pins and -0.2V on VDD and VPP pins. During transitions, this level may undershoot to -2.0V for periods <20 nS. Maximum DC voltage on input/output pins and VDD is VDD +0.5V, which, during transitions, may overshoot to VDD +2.0V for periods <20 nS.
3. Maximum DC voltage on VPP may overshoot to +13.0V for periods <20 nS.
4. VPP erase/program voltage is normally 2.7V to 3.6V. Applying 11.7V to 12.3V to VPP during erase/program can be done for a maximum of 1,000 cycles on the main blocks and 1,000 cycles on the parameter blocks. VPP may be connected to 11.7V to 12.3V for a total of 80 hours maximum.
5. Output shorted for no more than one second. No more than one output shorted at a time.


Description

The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide range of applications. The product can be operated at VDD = 2.7V to 3.6V and VPP = 1.65V to 3.6V or 11.7V to 12.3V. Its low voltage operation capability greatly extends battery life for portable applications.

The W28F321 provides high performance asynchronous page mode. It allows code execution directly from Flash, thus eliminating time-consuming wait states. Furthermore, its configurative partitioning architecture allows flexible dual work operation.

The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main Blocks that provide maximum flexibility for safe nonvolatile code and data storage.

Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.




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