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W3HG128M64EEU

Features: 200-pin, Small-Outline DIMM (SO-DIMM), Raw Card B Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components VCC = VCCQ = 1.8V ± 0.1V VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential ...

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SeekIC No. : 004544723 Detail

W3HG128M64EEU: Features: 200-pin, Small-Outline DIMM (SO-DIMM), Raw Card B Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200 Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components VCC =...

W3HG128M64EEU Data Sheet

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Part Number:
W3HG128M64EEU
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

200-pin, Small-Outline DIMM (SO-DIMM), Raw Card "B"
Fast data transfer rates: PC2-6400*, PC2-5300*, PC2-4200 and PC2-3200
Utilizes 800*, 667*, 533 and 400 Mb/s DDR2 SDRAM components
VCC = VCCQ = 1.8V ± 0.1V
VCCSPD = 1.7V to 3.6V
JEDEC standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
Four-bit prefetch architecture
DLL to align DQ and DQS transitions with CK
Multiple internal device banks for concurrent operation
Supports duplicate output strobe (RDQS/RDQS#)
Programmable CAS# latency (CL): 3, 4, 5* and 6*
Adjustable data-output drive strength
On-Die Termination (ODT)
Posted CAS# latency: 0, 1, 2, 3 and 4
Serial Presence Detect (SPD) with EEPROM
64ms: 8,192 cycle refresh
Gold edge contacts
Single Rank
RoHS Compliant
 JEDEC Package option
• 200 Pin (SO-DIMM)
• PCB 29.20mm (1.150") TYP


Specifications

Symbol Paramete Min Max Units
VCC VCC Supply Voltage Relative to VSS -0.5 2.3 V
VIN, VOUT Voltage on any Pin Relative to VSS -0.5 2.3 V
TSTG Storage Temperature -55 100
TCASE DDR2 SDRAM Device Operating Temperature* 0 85
TOPR Operating Temperature (Ambient) 0 65
II Input Leakage Current; Any input 0V VIN VCC;
VREF input 0V VIN 0.95V; (All other pins not under
test = 0V)		 Command/Address,
RAS#, CAS#, WE# S#,
CKE		 -40 40 A
CK, CK# -20 20  
DM -5 5  
IOZ Output Leakage Current; 0V VOUT VCCQ; DQs
and ODT are disabled		 DQ, DQS, DQS# -5 5 A
IVREF VREF Leakage Current; VREF = Valid VREF level -16 16 A
* TCASE specifi es as the temperature at the top center of the memory devices.


Description

The W3HG128M64EEU is a 128Mx64 Double Data Rate 2 SDRAM memory module based on 1Gb DDR2 SDRAM components. The module consists of eight 128Mx8, in FBGA package mounted on a 200 pin SO-DIMM FR4 substrate.




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