W982516AH-75

The W982516AH-75 is designed as a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words x 4 banks x 16bits. Using pipelined architecture and 0.175 mm process technology, It delivers a data bandwidth of up to 143M words per second (-7).

W982516AH-75 has thirteen features. (1)3.3V ±0.3V power supply. (2)Up to 143MHz clock frequency. (3)4,194,304 words x 4 banks x 16bits organization. (4)Self refresh mode: standard and low power. (5)CAS latency: 2 and 3. (6)Burst length: 1, 2, 4, 8, and full page. (7)Burst read, single writes mode. (8)Byte data controlled by LDQM, UDQM. (9)Power-down mode. (10)Auto-precharge and controlled precharge. (11)8K refresh cycles /64mS. (12)Interface: LVTTL. (13)Packaged in TSOP II 54-pin, 400mil - 0.80. That are all the main features.

Some absolute maximum ratings of W982516AH-75 have been concluded into several points as follow. (1)Its input voltage would be from -0.3V to Vcc+0.3V. (2)Its output voltage would be from -0.3V to Vcc+0.3V. (3)Its power supply voltage would be from -0.3V to 4.6V. (4)Its operating temperature range would be from 0°C to 70°C. (5)Its storage temperature range would be from -55°C to 150°C. (6)Its soldering temperature 10s would be 260°C. (7)Its power dissipation would be 1W. (8)Its short circuit output current would be 50mA. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some DC characteristics of W982516AH-75 are concluded as follow. (1)Its operating current would be max 75mA. (2)Its standby current would be max 35mA at CKE=Vih and would be max 1mA at CKE=Vil. (3)Its no operating current is max 55mA at CKE=Vih and would be max 10mA at CKE=Vil. (4)Its burst operating current would be max 95mA. (5)Its auto refresh current would be max 160mA. And so on. If you have any question or suggestion or want to know more information of W982516AH-75 please contact us for details. Thank you!